A hemispherical electronic eye camera based on compressible silicon optoelectronics. A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates.
Controlled buckling of semiconductor nanoribbons for stretchable electronics. Material challenge for flexible organic devices. Fine structure constant defines visual transparency of graphene. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Mirrorless lasing from mesostructured waveguides patterned by soft lithography. Individual aligned single-wall carbon nanotubes on elastomeric substrates. Raman spectrum of graphene and graphene layers. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Graphene segregated on Ni surfaces and transferred to insulators. Chemical vapor deposition of thin graphite films of nanometer thickness. Processable aqueous dispersions of graphene nanosheets. Preparation and characterization of graphene oxide paper. Electronic confinement and coherence in patterned epitaxial graphene. Controlling the electronic structure of bilayer graphene.
Ohta, T., Bostwick, A., Seyller, T., Horn, K. Electromechanical resonators from graphene sheets. Ultrahigh electron mobility in suspended graphene. Energy band gap engineering of graphene nanoribbons. A rubberlike stretchable active matrix using elastic conductors. Stretchable and foldable silicon integrated circuits. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Electric field effect in atomically thin carbon films. Experimental observation of the quantum Hall effect and Berry’s phase in graphene.
Two-dimensional gas of massless Dirac fermions in graphene. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Highly conducting graphene sheets and Langmuir–Blodgett films. Employing the outstanding mechanical properties of graphene 7, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics 8, 9. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700 cm 2 V -1 s -1 and exhibit the half-integer quantum Hall effect 4, 5, implying that the quality of graphene grown by chemical vapour deposition is as high as mechanically cleaved graphene 6. The transferred graphene films show very low sheet resistance of ∼280 Ω per square, with ∼80 per cent optical transparency. Here we report the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides 2, 3. Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications 1.
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